Abstract :
Combined with atomic force microscope AFM., micro-Raman spectroscope, cross-section transmission electron
microscope TEM.and high resolution electron microscope HREM.analyses, the surface morphology and structures of
a-Si:Hra-SiN :H multilayers MLs., irradiated by excimer laser through the phase shifting mask grating, are investigated. It x
is found that Si nanocrystallites nc-Si.are formed within the initial a-Si:H sublayers, and the size of the grains can be
controlled due to the constrained crystallization effect. And it is possible to use this laser interference crystallization LIC.
method to get the periodic distribution of nc-Si in both transverse and longitudinal direction. q2000 Elsevier Science B.V.
All rights reserved
Keywords :
Phase shifting mask grating , excimer laser , Nanocrystal Si , multilayers , Structures