Title of article :
A solution growth route to nanocrystalline nickel oxide thin films
Author/Authors :
Biljana Pejova)، نويسنده , , Tanja Kocareva، نويسنده , , Metodija Najdoski، نويسنده , , Ivan Grozdanov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
A chemical route for preparation of NiO thin films on glass substrates from solution containing nickel 2q.ions and urea
is presented. The deposition process is based on the fact that urea decomposes to CO2and NH3by heating at higher
temperature. The as-deposited and post-deposition heat-treated materials were characterized by X-ray analysis and FTIR
spectroscopy. The results of some optical and electrical measurements made on these films are discussed. X-ray analysis
confirmed that as-deposited film is 3Ni OH.2P2H2O, while the post-deposition heat-treated one is nickel oxide with an
average crystal size of 13 nm. According to the optical investigations, the absorption coefficient of the deposited material
increases upon annealing, the absorption of the annealed films gradually decrease with an increase of the wavelength in the
390–820 nm region. The optical band gap for the post-deposition heat-treated films is 3.6 eV. While the as-deposited thin
films are dielectric, the post-deposition treated ones are characterized by resistivity of several MVsrcm2 at room
temperature. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
Nickel oxide , nanocrystalline materials , semiconductors , Chemical solution method , Thin solid films , optical band gap
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science