Preparation of Ba Sr/TiO thin films by sol–gel method with 0.5 0.5 3 rapid thermal annealing

Ba0.5Sr0.5.TiO3 BST. thin films were deposited on Si and plantinized Si substrates using sol–gel method with rapid thermal annealing RTA.. The films were characterized by inductive coupled plasma ICP.analysis, X-ray diffraction XRD., atomic force microscope AFM., scanning electron microscope SEM.and electrical measurements. BST get well crystallized after RTA at 7008C for 5 min. Grain size, grain height, and thus, surface roughness and film density increase with the increase of annealing time. SEM cross-section results clearly demonstrate a better BSTrsubstrate interface compared with conventional annealing. The dielectric constant and loss tangent of BST films at 10 kHz are 435 and 0.069, respectively. This good dielectric property is believed to arise from the better BSTrsubstrate interface. q2000 Elsevier Science B.V. All rights reserved