Title of article
Stress relaxation by generation of L-shape misfit dislocations in 001/ heterostructures with diamond and sphalerite lattices
Author/Authors
A.V. Kolesnikov )، نويسنده , , A.P. Vasilenko، نويسنده , , E.M. Trukhanov، نويسنده , , A.K. Gutakovsky، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
57
To page
60
Abstract
The problem of generation of L-shape misfit dislocations MDs.is investigated for 001.heterosystems with diamond
and sphalerite crystal structures. These 608 MDs can be formed by modified Frank–Read dislocation sources as well as by
Hagen–Strunk ones. The analysis shows that perpendicular dislocation lines included in L-shape MDs have different types
of screw dislocation components namely, left-screw and right-screw ones.. As a result, the stress-releasing process tends to
slow preventing further generation of L-shape dislocations and annihilation of threading dislocations TDs.. To minimize
density of TDs and to form equilibrium plane MD networks at the final stage of stresses relaxation process, it is necessary to
generate mutually perpendicular MD arrays with the same types of screw dislocation components. q2000 Elsevier Science
B.V. All rights reserved.
Keywords
Misfit dislocations , Heterostructure , Semiconductor , Crystal defects
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996481
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