• Title of article

    Stress relaxation by generation of L-shape misfit dislocations in 001/ heterostructures with diamond and sphalerite lattices

  • Author/Authors

    A.V. Kolesnikov )، نويسنده , , A.P. Vasilenko، نويسنده , , E.M. Trukhanov، نويسنده , , A.K. Gutakovsky، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    57
  • To page
    60
  • Abstract
    The problem of generation of L-shape misfit dislocations MDs.is investigated for 001.heterosystems with diamond and sphalerite crystal structures. These 608 MDs can be formed by modified Frank–Read dislocation sources as well as by Hagen–Strunk ones. The analysis shows that perpendicular dislocation lines included in L-shape MDs have different types of screw dislocation components namely, left-screw and right-screw ones.. As a result, the stress-releasing process tends to slow preventing further generation of L-shape dislocations and annihilation of threading dislocations TDs.. To minimize density of TDs and to form equilibrium plane MD networks at the final stage of stresses relaxation process, it is necessary to generate mutually perpendicular MD arrays with the same types of screw dislocation components. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    Misfit dislocations , Heterostructure , Semiconductor , Crystal defects
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996481