Abstract :
The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:Hrcrystalline
silicon structures, such as deep-level transient spectroscopy DLTS., photoluminescence at 6 K and room temperature, and
X-ray diffraction at grazing incidence XRDGI.are presented. Three important results follow from this contribution.
. i Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be
sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the
porous siliconrsilicon and a-Si:Hrsilicon structures.
ii. Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most
distinct one being at 0.85 eV.
iii. X-ray reflection at 2u;288 has been found as the reflection suitable for tracing the structural properties of a-Si:H
layer. q2000 Elsevier Science B.V. All rights reserved.
