Abstract :
The paper presents the results of improved feedback charge capacitance–voltage C–V.measurements obtained on a
porous silicon PS.rp-type crystalline silicon c-Si.structure prepared in the MOS configuration. Even though the porosity
less than 10%.of the ;1-mm-thick PS overlayer is low, some electrical properties of the structure are considerably
sensitive to the light exposure. Such parameters as Fermi level position, flat-band voltage, surface potential, positions of the
deep-level hole traps and acceptor density will be presented for various situations as defined by the sample ambient, the
temperature and light illumination. The following two findings are shown and analyzed:
. i total suppression of the large hysteresis, which is typical for the measurements in dark, of the C–V curves after the
illumination, and which is related to the Staebler–Wronski effect SWE.;
ii. interface states are recovered in the dark and its density Nss has increased by ;4.7=1010 cmy2 eVy1 in comparison
with the zero density of illuminated PSrc-Si structure. q2000 Elsevier Science B.V. All rights reserved.
