Title of article :
Optical properties of as grown and ion implanted Arq,Nq,a/ 2 GaAs nipi doping superlattices
Author/Authors :
H.W. Kunert، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
77
To page :
81
Abstract :
A brief review of the optical properties of GaAs nipi doping superlattices DSLs.subjected to Nq2 , Arqions, and alpha particle bombardment is given. Several experimental techniques, such as low temperature CW and time resolved photoluminescence CW and TR-LTPL.as well as Raman spectroscopy RS. and spectroscopic ellipsometry SE. have been used to detect new optically active bands. An attempt is made to explain the origin of these new bands. q2000 Elsevier Science B.V. All rights reserved
Keywords :
Arq-ion , GaAs doping superlattice , Raman spectroscopy , Photoluminescence
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996485
Link To Document :
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