Hexagonal InNrsapphire heterostructures: interplay of interface and layer properties

Formation of an AlInN interface transition layer in plasma-assisted molecular beam epitaxy PA MBE.of InNrAl2O3 0001.structure has been found by high-resolution X-ray diffraction XRD., transmission electron microscopy TEM., secondary ion mass-spectroscopy SIMS.and optical transmission techniques. Having a thickness of below 100 nm, an Al content of ;0.3 and rather sharp interfaces, the interlayer improves the quality of the main InN film, allowing its high-temperature growth without In droplet formation. XRD Q-rocking curves width of 350 arc sec, Hall mobility of 600 cm2rV s 300 K.at electron concentration of around 1020 cmy3 have been achieved for the best InN epilayer. Employed initial growth stage affects significantly the quality of both the AlInN interface layer and the InN layer. q2000 Elsevier Science B.V. All rights reserved.