Title of article :
Surfaces of GaP and InP: structural motifs, electronic statesand optical signatures
Author/Authors :
Schmidt، W.G. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
We present ab initio calculations on the energetics and geometry, as well as electronic and optical properties of InP and
GaP 001.surfaces. Cation-rich conditions lead to the formation of asymmetric cation–anion dimers on top of a 2=4.
reconstructed cation-terminated surface. Anion-rich surfaces form c 4=4.reconstructions. Based on the DFT-LDA
electronic structure, we compute the reflectance anisotropy of the energetically favoured 2=4.reconstructions. Strong
anisotropies in the low-energy region arise from transitions between s-like cation–cation bonding states and empty dangling
bonds. Transitions involving P dimer states and surface modified bulk wave functions contribute at higher energies. The
application of GW corrections leads to non-uniform shifts of characteristic peaks and changes the line shape, considerably
improving the agreement with experiment. q2000 Elsevier Science B.V. All rights reserved
Keywords :
gallium phosphide , Indium phosphide , 001. Surfaces , Reflection spectroscopy , Density functional calculations , Excitationspectra calculations
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science