Title of article :
Surfaces of GaP and InP: structural motifs, electronic statesand optical signatures
Author/Authors :
Schmidt، W.G. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
179
To page :
184
Abstract :
We present ab initio calculations on the energetics and geometry, as well as electronic and optical properties of InP and GaP 001.surfaces. Cation-rich conditions lead to the formation of asymmetric cation–anion dimers on top of a 2=4. reconstructed cation-terminated surface. Anion-rich surfaces form c 4=4.reconstructions. Based on the DFT-LDA electronic structure, we compute the reflectance anisotropy of the energetically favoured 2=4.reconstructions. Strong anisotropies in the low-energy region arise from transitions between s-like cation–cation bonding states and empty dangling bonds. Transitions involving P dimer states and surface modified bulk wave functions contribute at higher energies. The application of GW corrections leads to non-uniform shifts of characteristic peaks and changes the line shape, considerably improving the agreement with experiment. q2000 Elsevier Science B.V. All rights reserved
Keywords :
gallium phosphide , Indium phosphide , 001. Surfaces , Reflection spectroscopy , Density functional calculations , Excitationspectra calculations
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996503
Link To Document :
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