Title of article :
Photoemission study of Gd atoms on CdTe 100/ surface
Author/Authors :
E. Guziewicz، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
231
To page :
236
Abstract :
A few monolayers of Gd atoms were evaporated on a clean CdTe p. 100. bulk crystal. and CdTe n. 100. epitaxial layer.surface. Constant initial state CIS. spectra were measured at the Gd4d™Gd4f Fano resonance in the photon energy range of 140–160 eV. both after evaporation and heating processes. The binding energy of the Gd4f state was determined after Gd evaporation 9.43 and 9.50 eV for p- and n-type crystals, respectively.and after heating 9.00 and 9.80 eV.. Energy distribution curves EDCs.measured in the photon energy range 50–100 eV.show additional density of states at the valence band edge only for CdTe n.rGd crystal. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
Electronic structure , Semimagnetic semiconductors , Resonant photoemission spectroscopy
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996512
Link To Document :
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