Title of article :
Surface morphologies of III-V based magnetic semiconductor
Ga,Mn/As grown by molecular beam epitaxy
Author/Authors :
Jianrong Yang، نويسنده , , Haruyuki Yasuda، نويسنده , , Shanlee Wang، نويسنده , , Fumihiro Matsukura، نويسنده , ,
Yuzo Ohno، نويسنده , , Hideo Ohno، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The influence of Mn flux intensity and growth temperature on surface morphologies of III–V based magnetic
semiconductor Ga,Mn.As layers grown by low temperature LT.molecular beam epitaxy MBE.on 001.GaAs is studied
by atomic force microscopy AFM.. The results show that homogeneous Ga,Mn.As grows two-dimensionally 2D.,
whereas 3D growth takes place when hexagonal second phase appears on the growth front. q2000 Elsevier Science B.V.
All rights reserved.
Keywords :
GA , Mn.As , Segregation , Surface morphology , Atomic force microscopy , Molecular beam epitaxy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
