Abstract :
We have studied the properties of MBE-grown MnAs layers on GaAs 111.B. In this report, we focus on the morphology
of layers in the thickness range 1–20 ML, which we have probed by means of in situ electron diffraction reflection high
energy electron diffraction RHEED.and LEED., and ex situ atomic force microscopy AFM., and on the influence of the
growth conditions substrate temperature and growth rate.. We found out that MnAs films, thinner than around 75 A° , are
discontinuous, with uncovered regions of the substrate. The MnAs islands are very flat, with roughness beyond the
resolution of the AFM measurement. In layers thicker than 75 A° , the areal density of uncovered GaAs substrate regions
depends strongly on the MnAs growth temperature. Under particular conditions, continuous films of this thickness can be
obtained. q2000 Elsevier Science B.V. All rights reserved.
