Title of article :
Smooth interface effects on the confinement properties of
GaSbrAl Ga Sb quantum wells
Author/Authors :
Artur B. Adib، نويسنده , , Jeanlex S. de Sousa، نويسنده , , Gil A. Farias، نويسنده , , Valder N. Freire، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
A theoretical investigation on the confinement properties of GaSbrAl Ga Sb single quantum wells QWs.with x 1yx
smooth interfaces is performed. Error function erf.-like interfacial aluminum molar fraction variations in the QWs, from
which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that
the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is
stronger in thin QWs. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
GaSbrAl xGa1yxSb quantum wells , Interface effects , Exciton energy blue shift , Carriers confinement properties
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science