Title of article :
Smooth interface effects on the confinement properties of GaSbrAl Ga Sb quantum wells
Author/Authors :
Artur B. Adib، نويسنده , , Jeanlex S. de Sousa، نويسنده , , Gil A. Farias، نويسنده , , Valder N. Freire، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
336
To page :
340
Abstract :
A theoretical investigation on the confinement properties of GaSbrAl Ga Sb single quantum wells QWs.with x 1yx smooth interfaces is performed. Error function erf.-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
GaSbrAl xGa1yxSb quantum wells , Interface effects , Exciton energy blue shift , Carriers confinement properties
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996531
Link To Document :
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