Abstract :
Si 100. was implanted with 80 keV Ge ions to a Si95Ge5 composition. The implanted layer 120 nm thick.was
amorphous as judged by XTEM, but the valence band photoelectron spectra from this system were clearly different from
earlier data on amorphous Si. Thermal regrowth of the damaged layer was found to proceed, as expected, from the
damaged–undamaged interface. However, even after extended annealing at temperatures well above that required for
interfacial regrowth, the surface region remained disordered non-single crystal.. The results are interpreted in terms of
parallel recrystallization of the implantation-damaged layer at the interface as well as at the surface. Due to lack of a
template, the latter process does not result in a single crystal. q2000 Elsevier Science B.V. All rights reserved
