Diffusion of Ga on the GaAs 113/ surface in thew110xdirection during MOVPE growth

We have measured the valley spacing on the GaAs 113.surface using ex-situ atomic force microscopy AFM.. From samples grown at different temperatures and partial pressures, the diffusion length, activation energies for diffusion and diffusion constants were derived. The results were correlated to in-situ reflectance anisotropy spectroscopy RAS.spectra. On GaAs 113., mainly, an 8=1.reconstruction is found with an EDiffs 0.38"0.06.eV. q2000 Elsevier Science B.V. All rights reserved.