Van der Waals-xenotaxy: growth of GaSe 0001/on low index silicon surfaces

Thin films of the layered chalcogenide GaSe were deposited on Si 111., Si 110., and Si 100.surfaces by molecular beam epitaxy. The interface formation was investigated with photoemission and LEED. In all cases GaSe grows with its hexagonal 0001.axis normal to the substrate surfaces. q2000 Elsevier Science B.V. All rights reserved