• Title of article

    Atomic oxygen-induced surface processes: D O formation and D 2 2 desorption on the DrSi 100/ surface

  • Author/Authors

    S. Shimokawa، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    94
  • To page
    98
  • Abstract
    The atomic oxygen-induced surface reaction has been studied on the DrSi 100.surfaces. The mass spectroscopic method reveals that D2desorption as well as D2O formation are induced upon collision of oxygen atoms with the DrSi 100. surfaces. As the oxygen atoms are taken into the Si`Si bonds, the desorption of D2 and D2O molecules is terminated despite the survival of the D adatoms. We propose a possible mechanism of the oxygen-induced D2O formation and D2 desorption. q2000 Elsevier Science B.V. All rights reserved
  • Keywords
    Atomic oxygen , Hydrogen abstraction , Hydrogen-terminated Si surface
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996576