Author/Authors :
Y.F. Li)، نويسنده , , X.L. Ye، نويسنده , , F.Q. Liu، نويسنده , , B. Xu، نويسنده , , D. Ding، نويسنده , , W.H. Jiang، نويسنده , , Z.Z. Sun، نويسنده , , H.Y. Liu، نويسنده , , Y.C. Zhang، نويسنده , , Z.G. WANG، نويسنده ,
Abstract :
The effects of InP substrate orientations on self-assembled InAs quantum dots QDs. have been investigated by
molecular beam epitaxy MBE.. A comparison between atomic force microscopy AFM.and photoluminescence PL.
spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other
hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in
size and have a great improvement in PL properties. More importantly, 1.55-mm luminescence at room temperature RT.
can be realized in InAs QDs deposited on 001.InP substrate with underlying In0.52 Al0.24Ga0.24As layer. q2000 Elsevier
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