Title of article
F2 laser etching of GaN
Author/Authors
T. Akane، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
335
To page
339
Abstract
F2 laser-induced direct etching of GaN has been demonstrated.Well resolved geometric structure is found on edge of etched
area. No acceleration of ablation rate at higher laser intensity was con®rmed, while the rate acceleration is obvious in case of
KrF excimer laser irradiation. The ablation is thought to proceed with direct photoionization initiated by single 7.9 eV photon
absorption. # 2000 Elsevier Science B.V. All rights reserved
Keywords
GaN , F2 laser , Etching , planarization , atomic force microscopy (AFM) , ablation
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996671
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