Abstract :
F2 laser-induced direct etching of GaN has been demonstrated.Well resolved geometric structure is found on edge of etched
area. No acceleration of ablation rate at higher laser intensity was con®rmed, while the rate acceleration is obvious in case of
KrF excimer laser irradiation. The ablation is thought to proceed with direct photoionization initiated by single 7.9 eV photon
absorption. # 2000 Elsevier Science B.V. All rights reserved
Keywords :
GaN , F2 laser , Etching , planarization , atomic force microscopy (AFM) , ablation
