Author/Authors :
Toshiaki Fujino*، نويسنده , , Takashi Fuse
Takashi Shiizaki، نويسنده , , Jeong-Tak Ryu1، نويسنده , , Katsuhiko Inudzuka، نويسنده , ,
Yujin Yamazaki، نويسنده , , Mitsuhiro Katayama، نويسنده , ,
Kenjiro Oura، نويسنده ,
Abstract :
We have used coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-¯ight elastic recoil detection
analysis (TOF-ERDA) to investigate the adsorption of atomic hydrogen on the 6H-SiC(0 0 0 1)p3 p3 surface. It has been
found that the saturation coverage of hydrogen on the 6H-SiC(0 0 0 1)p3 p3 surface is about 1.7 ML. Upon saturated
adsorption of atomic hydrogen, the p3 p3 surface structure changes to the 1 1 structure. The data of the CAICISS
measurements have indicated that as a result of the hydrogen adsorption, Si adatoms on the p3 p3 surface move from T4 to
on-top sites. # 2001 Elsevier Science B.V. All rights reserved.
Keywords :
Elastic recoil detection analysis , Atomic hydrogen adsorption , silicon carbide , Ion scattering spectroscopy
