Thermal stability of Li-related 1D defects in ZnSe:Li/GaAs grown by MBE

Curved streak patterns are clearly observed in the azimuth of [1 0 0] when the substrate temperature is heated up to 6008C, suggesting that the one-dimensional Li chains are stable. The growth rates of non-doped ZnSe on Li-doped ZnSe are found to be about 1/2 of that of non-doped ZnSe grown on GaAs. Even when no Li is supplied, the RHEED exhibits clear curved streak patterns. The results indicate that Li atoms segregate onto the topmost surface during the MBE growth, because of high diffusivity of Li, resulting in the formation of 1D array. # 2001 Elsevier Science B.V. All rights reserved