Title of article :
Computer simulation of gas rarefaction effects and ®lm deposition
characteristics in a magnetron sputtering apparatus
Author/Authors :
Tsukasa Kobayashi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Ar gas is known to be rare®ed in front of a magnetron sputtering cathode due to the collisional heating by energetic
sputtered atoms. The effects of the Ar rarefaction in a magnetron sputtering apparatus used for Ti-®lm deposition were
investigated using the direct simulation Monte Carlo (DSMC) method which is capable of taking gas rarefaction effects into
account. The calculated ®lm deposition rate on a substrate and the ®lm coverage in a small hole were larger than those
calculated by the conventional simulation where the gas rarefaction is not included. This shows that the gas rarefaction
improves both the ®lm deposition rate and the ®lm coverage. # 2001 Elsevier Science B.V. All rights reserved.
Keywords :
Film deposition , computer simulation , Magnetron sputtering , Direct simulation Monte Carlo method
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science