Title of article
New organic bistable ®lms for ultrafast electric memories
Author/Authors
Z.Y. Huang، نويسنده , , G.R. Chen، نويسنده , , W. Xu، نويسنده , , D.Y. Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
447
To page
451
Abstract
Thin ®lms which have electrical bistable effects are mostly metal-organic complexes and/or organic-organic (all-organic)
complexes. Very recently some simple (mono-molecular) organic materials have been discovered which have bistable states at
room temperature, too. The threshold voltage across these organic ®lms with a thickness of 60 nm is 4±6 Vand the transition
time is 5±10 ns. Therefore, they are suitable to make ultrafast, non-volatile, organic memories (WORM or EPROM). Another
possible application for an STM type ultrahigh-capacity memory is also illustrated. # 2001 Elsevier Science B.V. All rights
reserved.
Keywords
Organic ®lm , Electric bistable , Storage media , memory
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
996762
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