Group III impurity doped ZnO ®lms prepared by atmospheric pressure chemical±vapor deposition using zinc acetylacetonate and oxygen

Highly conductive and transparent ZnO thin ®lms were prepared by atmospheric pressure CVD on glass substrates in the temperature range from 375 to 4758C. Aluminium acetylacetonate or gallium acetylacetonate were used as the dopant source of group III element. The resistivity of the ®lms critically depends on the amount of dopants and changes in a range of 10ÿ1 to 10ÿ3 O cm. The lowest resistivity of 2:0 10ÿ3 O cm was obtained in the Ga-doped ®lms deposited at the substrate temperature of 4258C. X-ray diffraction results show that all deposited ®lms were polycrystalline in nature with (002) preferred orientation. The electron concentration and Hall mobility of the ®lm with the lowest resistivity are 5:9 1019 cmÿ3 and 31 cm2 Vÿ1 s, respectively. # 2001 Elsevier Science B.V. All rights reserved