Large-hole anode-type fast atom beam (LA-FAB) source and its application to high-aspect-ratio GaAs etching

We developed a large-hole anode-type fast atom beam (LA-FAB) source and evaluated its discharge characteristics. To estimate the LA-FAB source performance, we measured the effect of the magnetic ®eld intensity on the discharge current. The results showed that the LA-FAB source could produce high beam current at 1ÿ2 kV discharge voltage in relatively weak magnetic ®eld of 50 G as compared with ordinary-type-FAB sources, and we also achieved GaAs etching with aspect-ratios of about 9:1 by using CCl4 and could fabricate cavity mirrors for GaAlAs ridge wave guide laser diodes by using Cl2. For GaAs etching, it is feasible to produce aspect-ratios of about 9:1 with vertical etched walls and the fabricated cavity mirrors yield almost the same performance as cleaved mirrors. The FAB source will contribute to the continued improvement of optoelectric integrated circuits and ®ber optical communications. # 2001 Elsevier Science B.V. All rights reserved.