Title of article
Preparation and thermal stability of silicon nanoparticles
Author/Authors
Y. Zhu، نويسنده , , H. Wang، نويسنده , , P.P. Ong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
44
To page
48
Abstract
Silicon nanoparticles were prepared in a homemade apparatus by means of a dc sputtering method in which the condensates
were collected directly from the cold surface of a liquid nitrogen trap. They were dispersed in 2-propanol under ultrasonic
agitation, and dried in the atmosphere. The particles were found to compose of tiny silicon crystals and were only mildly
oxidized. Various samples were prepared with different annealing times and temperatures in ultrahigh vacuum. XPS results
show that, in the particles, the Si±O bonds of the Si4 state are the most stable, followed next by the unoxidised state Si0. The
intermediate oxidation states are the least stable; they exist only at suf®ciently low temperatures (3008C or lower) and are
converted to either Si0 or Si4 at higher temperatures. # 2001 Elsevier Science B.V. All rights reserved.
Keywords
Silicon nanoparticles , thermal stability , X-ray photoelectron spectroscopy (XPS)
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
996839
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