• Title of article

    Secondary electron emission data of cesiated oxygen free high conductivity copper(II)

  • Author/Authors

    H.J. Hopman، نويسنده , , H. Zeijlemaker and J. Verhoeven، نويسنده , , J. Verhoeven، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    10
  • From page
    197
  • To page
    206
  • Abstract
    Depositing 0.5 monolayer of Cs on a properly prepared disk of oxygen free high conductivity (OFHC) copper, the workfunction decreases by 3:17 0:15 eV. As a result, the coef®cient of secondary electron emission under electron bombardment increases and the width of the secondary electron energy distribution at half maximum decreases from 6.7 to 2.8 eV. For an impact energy of the primary electrons Ep < 20 eV, it is found that the production of true secondary electrons increases by a factor 2.2. The probability of elastic scattering of very low energy electrons increases from 0.1 on clean copper to 0.4 on cesiated copper. # 2001 Elsevier Science B.V. All rights reserved
  • Keywords
    Cesiated copper , Secondary electron emission , OFHC
  • Journal title
    Applied Surface Science
  • Serial Year
    2001
  • Journal title
    Applied Surface Science
  • Record number

    996859