Title of article
Secondary electron emission data of cesiated oxygen free high conductivity copper(II)
Author/Authors
H.J. Hopman، نويسنده , , H. Zeijlemaker and J. Verhoeven، نويسنده , , J. Verhoeven، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
10
From page
197
To page
206
Abstract
Depositing 0.5 monolayer of Cs on a properly prepared disk of oxygen free high conductivity (OFHC) copper, the
workfunction decreases by 3:17 0:15 eV. As a result, the coef®cient of secondary electron emission under electron
bombardment increases and the width of the secondary electron energy distribution at half maximum decreases from 6.7 to
2.8 eV. For an impact energy of the primary electrons Ep < 20 eV, it is found that the production of true secondary electrons
increases by a factor 2.2. The probability of elastic scattering of very low energy electrons increases from 0.1 on clean copper
to 0.4 on cesiated copper. # 2001 Elsevier Science B.V. All rights reserved
Keywords
Cesiated copper , Secondary electron emission , OFHC
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
996859
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