Title of article :
Secondary electron emission data of cesiated oxygen free high conductivity copper(II)
Author/Authors :
H.J. Hopman، نويسنده , , H. Zeijlemaker and J. Verhoeven، نويسنده , , J. Verhoeven، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
10
From page :
197
To page :
206
Abstract :
Depositing 0.5 monolayer of Cs on a properly prepared disk of oxygen free high conductivity (OFHC) copper, the workfunction decreases by 3:17 0:15 eV. As a result, the coef®cient of secondary electron emission under electron bombardment increases and the width of the secondary electron energy distribution at half maximum decreases from 6.7 to 2.8 eV. For an impact energy of the primary electrons Ep < 20 eV, it is found that the production of true secondary electrons increases by a factor 2.2. The probability of elastic scattering of very low energy electrons increases from 0.1 on clean copper to 0.4 on cesiated copper. # 2001 Elsevier Science B.V. All rights reserved
Keywords :
Cesiated copper , Secondary electron emission , OFHC
Journal title :
Applied Surface Science
Serial Year :
2001
Journal title :
Applied Surface Science
Record number :
996859
Link To Document :
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