Title of article :
Porous silicon as a potentiometric transducer for ion detection: effect of the porosity on the sensor response
Author/Authors :
S. Zairi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
10
From page :
225
To page :
234
Abstract :
This paper shows the possibility to use the oxidized porous silicon (PS) as a transducer material for ion sensor application. It aims to study the over Nernstian behavior of the porous material towards the concentration of sodium ions in contact. We have studied the dependence of the PS sensitivity on the porosity of the samples, which are prepared from a lightly doped silicon substrate. Then, we have presented a model to explain the mechanism of the ionic species adsorption at the electrolyte/ SiO2 interface, and to interpret the observed large sensitivity against the different concentrations of the cations. The reproducibility of the sensor response and its lifetime were satisfactory for a frequent use. # 2001 Elsevier Science B.V. All rights reserved.
Keywords :
sensitivity , transducer , Sensor , Porous silicon , Over Nernstian
Journal title :
Applied Surface Science
Serial Year :
2001
Journal title :
Applied Surface Science
Record number :
996901
Link To Document :
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