Preparation of indium tin oxide ®lms and doped tin oxide ®lms by an ultrasonic spray CVD process

We deposited high quality doped indium oxide and tin oxide thin ®lms by an improved spray CVD process, which we characterize as ultrasonic spraying. The microstructure and electrical properties of these thin ®lms are analyzed by XRD, AFM, and van der Pauw four-point-probe technique and the results discussed. Absorptance and transmittance spectra in the visible±near-ultraviolet spectral region are also presented. The optical band gaps are 3.90 eV for Sn-doped In2O3 and 4.05 eV for F-doped SnO2. The minima of electrical resistivity of Sn-doped In2O3 and F-doped SnO2 ®lms are 1:5 10ÿ4 and 4:0 10ÿ4 Ocm, respectively. # 2001 Elsevier Science B.V. All rights reserved