• Title of article

    Vacancies and adatoms complexes on silicon surface

  • Author/Authors

    Hansheng Guo، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    5
  • From page
    351
  • To page
    355
  • Abstract
    By intentional introduction of Ni on Si(1 0 0) and Si(1 1 1) we have observed the reconstruction of the both surfaces. Scanning tunneling microscopy studies reveal morphologies of the Si(1 0 0)±2 n structure, which are partially different from those of the reported up to now. Heterogeneous reconstruction has been also observed on Si(1 1 1) surface: the 7 7 terraces and terraces being composed of disordered adatoms distribute alternatively on the surface. We present the results and give our primary exploration to their formation mechanism. # 2001 Elsevier Science B.V. All rights reserved
  • Keywords
    Ni-induced reconstruction , Scanning tunneling microscopy , Silicon surface
  • Journal title
    Applied Surface Science
  • Serial Year
    2001
  • Journal title
    Applied Surface Science
  • Record number

    996916