Title of article :
Vacancies and adatoms complexes on silicon surface
Author/Authors :
Hansheng Guo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
351
To page :
355
Abstract :
By intentional introduction of Ni on Si(1 0 0) and Si(1 1 1) we have observed the reconstruction of the both surfaces. Scanning tunneling microscopy studies reveal morphologies of the Si(1 0 0)±2 n structure, which are partially different from those of the reported up to now. Heterogeneous reconstruction has been also observed on Si(1 1 1) surface: the 7 7 terraces and terraces being composed of disordered adatoms distribute alternatively on the surface. We present the results and give our primary exploration to their formation mechanism. # 2001 Elsevier Science B.V. All rights reserved
Keywords :
Ni-induced reconstruction , Scanning tunneling microscopy , Silicon surface
Journal title :
Applied Surface Science
Serial Year :
2001
Journal title :
Applied Surface Science
Record number :
996916
Link To Document :
بازگشت