Title of article
Vacancies and adatoms complexes on silicon surface
Author/Authors
Hansheng Guo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
351
To page
355
Abstract
By intentional introduction of Ni on Si(1 0 0) and Si(1 1 1) we have observed the reconstruction of the both surfaces.
Scanning tunneling microscopy studies reveal morphologies of the Si(1 0 0)±2 n structure, which are partially different
from those of the reported up to now. Heterogeneous reconstruction has been also observed on Si(1 1 1) surface: the 7 7
terraces and terraces being composed of disordered adatoms distribute alternatively on the surface. We present the results and
give our primary exploration to their formation mechanism. # 2001 Elsevier Science B.V. All rights reserved
Keywords
Ni-induced reconstruction , Scanning tunneling microscopy , Silicon surface
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
996916
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