Title of article :
Nanotechnology enables a new memory growth model
Author/Authors :
Hwang، Chang-gyu نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry. The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory consumption and high-density memory usage in mobile handsets and digital consumer applications will grow very fast. For these new applications, NAND Flash memory will be the key enabling technology and its easy scaling and multibit/cell capabilities require a new memory growth model. The well-known Mooreʹs law still holds for most cases after the quartercentury history of the integrated circuit industry. However, the paradigm shift in the memory industry requires a new memory growth model: "a twofold increase per year in memory density." This paper will cover some details of recent memory technologies, application trends, and the proposed new memory growth model.
Keywords :
future memory , memory paradigm , multilevel cell (MLC) Flash , new memory growth model , 90-nm memory , Future dynamic RAM (DRAM) , NAND Flash , nanotechnology memory
Journal title :
Proceedings of the IEEE
Journal title :
Proceedings of the IEEE