Title of article
Reflection high-energy electron diffraction (RHEED) study of MBE growth of ZnSe on GaAs(1 1 1)B surfaces
Author/Authors
F.S Gard، نويسنده , , J.D Riley، نويسنده , , R Leckey، نويسنده , , B.F Usher، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
9
From page
94
To page
102
Abstract
A qualitative study of reflection high-energy electron diffraction (RHEED) patterns shows two distinct surface morphologies for ZnSe epilayers grown on GaAs(1 1 1)B surfaces. These patterns also reveal a reversible transition between these surface structures if growth conditions are modified. Creation of ZnSe mounds on a rough-surface background has been observed for substrate temperatures higher than 400°C and for Se/Zn atomic flux ratios less than 1.00±0.05. A “wavy” surface structure, with no mounds, was observed for substrate temperatures less than 400°C and for Se/Zn atomic flux ratios higher than 1.00±0.05.
Keywords
Molecular beam epitaxy , Zinc selenide , Gallium arsenide , RHEED , AFM , Surface diffusion
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997294
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