Title of article :
Characteristics of UHVCVD grown Si/Si1−x−yGexCy/Si quantum well heterostructure
Author/Authors :
A.K. Bhaduri and S.K. Ray، نويسنده , , G.S. Kar، نويسنده , , S.K. Banerjee، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Single well strained-layer Si1−x−yGexCy heterostructures have been grown by ultra-high vacuum chemical vapor deposition. The effect of addition of C on strain and vibrational characteristics of Si1−xGex (y=0) layer has been studied. The results of the carrier confinement characteristics, device transconductance and optical transitions in a Si/SiGeC/Si quantum well are presented.
Keywords :
Transconductance , Quantum well , Heterostructure , Chemical vapor deposition
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
