Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels

The photoelectrical and spectral characteristics of silicon carbide photodiodes with the non-uniform distribution of doping impurities in the base are theoretically examined. The expressions are obtained for the average drift field, depletion-layer width and the normalized photocurrent. The short-wavelength photosensitivity of such drift photodiodes are calculated. It is shown that using internal drift field arises due to gradient of concentration of deep acceptor levels in the p-region it is possible to increase the short-wavelength sensitivity of SiC photodiodes.