Title of article
Peculiarities of preparing a-SiC:H films from methyltrichlorosilane
Author/Authors
G.V. Rusakov، نويسنده , , L.A. Ivashchenko )، نويسنده , , V.I. Ivashchenko، نويسنده , , O.K. Porada، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
128
To page
134
Abstract
Some technological details of preparing amorphous and microcrystalline silicon carbide films by plasma-enhanced chemical vapor deposition are presented. In contrast to the traditional process, a liquid precursor, methyltrichlorosilane diluted in hydrogen for decomposition in the glow discharge is used. The films were analyzed by different methods with regard to their composition and structure (Auger spectroscopy, optical absorption, electronography, infrared spectroscopy).
Keywords
Amorphous films , Optical and infrared spectroscopy , Methyltrichlorosilane , Plasma processing , Silicon carbide
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997430
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