Title of article :
Peculiarities of preparing a-SiC:H films from methyltrichlorosilane
Author/Authors :
G.V. Rusakov، نويسنده , , L.A. Ivashchenko )، نويسنده , , V.I. Ivashchenko، نويسنده , , O.K. Porada، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Some technological details of preparing amorphous and microcrystalline silicon carbide films by plasma-enhanced chemical vapor deposition are presented. In contrast to the traditional process, a liquid precursor, methyltrichlorosilane diluted in hydrogen for decomposition in the glow discharge is used. The films were analyzed by different methods with regard to their composition and structure (Auger spectroscopy, optical absorption, electronography, infrared spectroscopy).
Keywords :
Amorphous films , Optical and infrared spectroscopy , Methyltrichlorosilane , Plasma processing , Silicon carbide
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science