Temperature dependence of acetylene adsorption and reaction on Si(1 1 1)-(7×7)

The adsorption and reaction of acetylene dosed on the Si(1 1 1)-(7×7) surface has been studied by means of X-ray photoemission, Auger, and HREELS spectroscopies for different substrate temperatures. For exposure at temperature of 600 °C, only an extremely thin reacted layer can be obtained, which hinders further molecular reaction at the surface, acting as a barrier layer. The increase in surface diffusion occurring between 600 and 750 °C overrides the barrier layer effect, allowing the growth of a thicker SiC.