• Title of article

    Progress towards SiC products

  • Author/Authors

    C.I. Harris، نويسنده , , S. Savage، نويسنده , , A. Konstantinov، نويسنده , , M. Bakowski، نويسنده , , P. Ericsson، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    393
  • To page
    398
  • Abstract
    Since the late 1980s, there has been a significant effort in the development of technology based on the semiconductor SiC, aimed at utilising the unique physical and electrical properties of this material to achieve high performance devices. Many factors governing the progress in development are beginning to converge with the result that the first commercial devices are appearing in the market place. The following article reviews some of the factors that are determining the progress in different application areas, including power electronics, high frequency devices and sensors. Breakthroughs in the technology in these areas will be believed to accelerate the adoption of SiC as a mature semiconductor material.
  • Keywords
    SiC , Power-electronics , RF , Sensors
  • Journal title
    Applied Surface Science
  • Serial Year
    2001
  • Journal title
    Applied Surface Science
  • Record number

    997488