Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

Sublimation epitaxy in a vacuum (SEV) has been used to obtain p-3C–SiC/n-6H–SiC heteroepitaxial structures. Results of a study of epilayers (X-ray diffraction analysis, scanning electron microscopy involving secondary electrons and electron beam induced current modes) and diode structures on their base (I–V and C–V characteristics, electroluminescence spectra, DLTS) are presented. Band discontinuities are determined and a band diagram of the p-3C–SiC/n-6H–SiC heterostructure is constructed.