Author/Authors :
P.Y. Park، نويسنده , , S. Norasetthekul، نويسنده , , K.P. Lee، نويسنده , , K.H. Baik، نويسنده , , B.P. Gila، نويسنده , , J.H. Shin، نويسنده , , C.R. Abernathy، نويسنده , , F. Ren، نويسنده , , E.S. Lambers، نويسنده , , S.J., Pearton, J.W., Corbett, M., Stavola، نويسنده ,
Abstract :
Wet chemical and plasma etch processes were developed for pattering of Sc2O3 films on GaN. Chlorine-based plasma chemistries produced a significant chemical enhancement of removal rate over pure Ar sputtering. The etching was anisotropic and did not significantly alter the surface composition of the Sc2O3 films. Reaction-limited wet etching in the HNO3/HCl/HF system was investigated as a function of solution formulation and temperature. The activation energy for the wet etching ranged from 8 to 14 kcal/mol and the etch rates were independent of solution agitation.
