Title of article
Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy
Author/Authors
H.Z. Xu، نويسنده , , K. Akahane، نويسنده , , H.Z. Song، نويسنده , , Y. Okada، نويسنده , , M. Kawabe، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
92
To page
98
Abstract
Self-assembled In0.4Ga0.6As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1 −1] and [−2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.
Keywords
A1 , low-dimensional structures , A3 , Molecular beam epitaxy , B2 , semiconducting III–V materials
Journal title
Applied Surface Science
Serial Year
2001
Journal title
Applied Surface Science
Record number
997515
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