Author/Authors :
S. Norasetthekul، نويسنده , , P.Y. Park، نويسنده , , K.H. Baik، نويسنده , , K.P. Lee، نويسنده , , J.H. Shin، نويسنده , , B.S. Jeong، نويسنده , , V. Shishodia، نويسنده , , D.P. Norton، نويسنده , , S.J., Pearton, J.W., Corbett, M., Stavola، نويسنده ,
Abstract :
The etch rates and mechanisms for HfO2 thin films in Cl2-, SF6- or CH4/H2-based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl2- and SF6-based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO2/Si structures etched with Cl2/Ar over a broad range of pressures or with SF6/Ar at low pressures. The surface morphologies of both HfO2 and Si were smooth over a wide range of etching conditions.
Keywords :
Etch rates , HfO2 films , Si substrates , Plasma
