Title of article :
Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress
Author/Authors :
G. Salviati، نويسنده , , C. Ferrari، نويسنده , , L. Lazzarini، نويسنده , , L. Nasi، نويسنده , , A.V. Drigo، نويسنده , , M. Berti، نويسنده , , D. De Salvador، نويسنده , , M. Natali، نويسنده , , M. MAZZER، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
13
From page :
36
To page :
48
Abstract :
A systematic study of strain relaxation mechanisms by TEM, XRD, RBS-channelling, SEM-CL and AFM in InxGa1−xAs/InP heterostructures grown by MOCVD under tensile and compressive initial misfit is reported. It is found that the layers under compression (0.61
Keywords :
Compressive strain , Tensile strain , Cracks , Grooves , Cross-hatching , Compositionally graded buffers
Journal title :
Applied Surface Science
Serial Year :
2002
Journal title :
Applied Surface Science
Record number :
997696
Link To Document :
