Title of article :
Strain effect on interatomic distances in InGaAs/InP epitaxial layers
Author/Authors :
M. Tormen، نويسنده , , D. De Salvador، نويسنده , , F. Boscherini، نويسنده , , F. Romanato، نويسنده , , A.V. Drigo، نويسنده , , S. Mobilio، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Using X-ray absorption fine structure spectroscopy (XAFS) with synchrotron radiation, we have performed an in-depth study on the strain-induced deformations in the first three coordination shells of (InGa)As epilayers deposited on InP(0 0 1). In order to obtain information on the second and third coordination shells, we have exploited the directional sensitivity of XAFS. All the experimental results can be reproduced by applying the macroscopic strain matrix to the local scale, independent of the chemical nature of the interatomic correlations.
Keywords :
Semiconductors , X-ray absorption fine structure , Alloy , Strain
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science