The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution

The experimental and calculation data on indium distribution in (Al)GaAs/InGaAs/(Al)GaAs quantum well (QW) structures are presented. Experimental examination revealed increase of In concentration in the growth direction in single QW and relative shift of composition in close-spaced multiple QWs. The results of calculation based on consideration of elastic strain energy contribution to the free energy of mixing are in good agreement with experimental data and testify that the elastic stresses give essential contribution in the observed effect.