Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O2 was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I(1/2,0) and I(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I(1/2,0) and I(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O2 exposure time. These suggest that Langmuir-type adsorption occurs at sites where O2 adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.