Title of article :
A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys
Author/Authors :
Gerald Lucovsky، نويسنده , , Jerry L. Whitten، نويسنده , , Yu Zhang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
8
From page :
48
To page :
55
Abstract :
Applied to transition metal oxides and silicate and aluminate alloys, a classification scheme that separates non-crystalline dielectrics into three groups with different amorphous morphologies, demonstrates a direct correlation between stability against crystallization and oxygen atom coordination. It also provides a local bonding model for molecular orbital (MO), calculations that are based on the coordination and symmetry of transition metal atoms and the orbital energies of their oxygen neighbors. These calculations provide important insights into the electronic structure of transition metal dielectrics, e.g. the role of anti-bonding d-states in determining conduction band offset energies with respect to Si.
Keywords :
Morphological classification of non-crystalline dielectrics , Transition metal silicates and aluminates , Molecular orbital calculations , Electronic structure , Band offset energies
Journal title :
Applied Surface Science
Serial Year :
2002
Journal title :
Applied Surface Science
Record number :
997833
Link To Document :
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