Author/Authors :
Xiao Tong، نويسنده , , Satoru Ohuchi، نويسنده , , Takehiro Tanikawa، نويسنده , , Ayumi Harasawa and Toyohiko Kinoshita، نويسنده , , Taichi Okuda، نويسنده , , Yoshinobu Aoyagi، نويسنده , , Toyohiko Kinoshita، نويسنده , , Shuji Hasegawa، نويسنده ,
Abstract :
The evolution of Si 2p core-level photoemission during a structural conversion from the Si (1 1 1)–3×3-Ag to the Si(1 1 1)–21×21-Ag superstructures induced by Ag adatoms adsorption at 140 K was studied using synchrotron radiation. The component from the top-layer Si-trimer atoms on the former surface was found to split into two components in the latter surface. The result is discussed in terms of a relaxation in some of the Si trimers induced by Ag adatoms sitting on the nearby Ag triangles of the 3×3-Ag substrate. The intensity ratio between the split components is a key to exclude some structure models proposed so far for the 21×21 phases.
