Title of article :
Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells
Author/Authors :
F.F. Maia Jr.، نويسنده , , J.A.K. Freire، نويسنده , , G.A. Farias، نويسنده , , V.N. Freire، نويسنده , , E.F. da Silva Jr.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
The excitonic properties of a ZnSe/ZnSxSe1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra.
Keywords :
Interface fluctuations , Quantum well , Strain effects , Binding energy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
