Title of article
The effects of the time-dependent and exposure time to air on Au/n-GaAs schottky barrier diodes
Author/Authors
A.F ?zdemir، نويسنده , , A K?kçe، نويسنده , , A Türüt، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
8
From page
188
To page
195
Abstract
A study on Au/n-GaAs Schottky barrier diode (SBD) parameters with and without thin native oxide layer fabricated on n-type GaAs has been made. The native oxide layer with different thicknesses on chemically cleaned GaAs surface was obtained by exposing the GaAs surfaces to clean room air before metal evaporation. The native oxide thicknesses of samples AuD2, AuD3, AuD4, AuD5, and AuD6 are in the form AuD2
Keywords
Schottky barrier diodes , Equilibrium barrier value , Exposure time
Journal title
Applied Surface Science
Serial Year
2002
Journal title
Applied Surface Science
Record number
997942
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