Atomic layer deposition of TiO2 thin films from TiI4 and H2O

Atomic layer deposition of titanium dioxide thin films from TiI4 and H2O was investigated. The method allowed self-limited growth of titanium dioxide (TiO2) films with anatase structure on Si(1 0 0) and amorphous SiO2 substrates at temperatures 135–375 °C provided that sufficient H2O doses were used. Rutile films were obtained at 445 °C. The growth rate increased with substrate temperature and ranged from 0.07 to 0.18 nm per cycle. On α-Al2O3(0 1 2) substrates, epitaxial growth of rutile was observed at 445 °C.